FZ Silicon Wafer Semiconductor
Description FZ silicon wafer is a type of high-purity silicon wafer that is commonly used in the semiconductor industry. FZ stands for Float Zone, which is a method of growing single crystal silicon. During the FZ process, a silicon rod is suspended vertically in a high-temperature furnace, and...
説明
Description
FZ silicon wafer is a type of high-purity silicon wafer that is commonly used in the semiconductor industry. FZ stands for Float Zone, which is a method of growing single crystal silicon.
During the FZ process, a silicon rod is suspended vertically in a high-temperature furnace, and a molten zone is created by heating a small section of the rod. The molten zone is moved along the length of the rod, and as it cools, it solidifies into a single crystal. The process is repeated multiple times until the entire length of the rod has been converted into a single crystal.
FZ silicon wafers have a very high level of purity, with impurity levels typically less than one part per billion. This purity makes them ideal for use in high-performance electronic devices, such as microprocessors, memory chips, and solar cells. FZ wafers are also used in scientific research and in the production of high-performance sensors and detectors.
Specification
| Diameter | 2" | 3" | 4" | 5" | 6" | 8" |
| Growth Method | FZ | |||||
| Orientation | < 1-0-0 > , < 1-1-1 > | |||||
| Type/Dopant | Intrinsic, N Type/Phos, P Type/Boron | |||||
| Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 |
| Thickness Tolerance | Standard ± 25um | ±50um | ||||
| Resistivity(Ohm-cm) | 1000-20000, Maximum Capabilities>20000, and 1-5 | |||||
| Surface Finished | P/E , P/P, E/E, G/G | |||||
| TTV (um) | Standard < 10 um | |||||
| Bow/Warp (um) | Standard <40 um | |||||

人気ラベル: fz silicon wafer semiconductor
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